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Zentronix Global

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LAPIS

DTA043TMT2L

Pre-Biased BJT Transistors

This part is listed from our general catalogue; no stock or price is shown. We quote by quantity and lead time.

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RoHS
Compliant
Pricing
Priced by quantity and lead time.
Support
Technical team assistance

Technical Specifications

50

Supplier Device Package
VMT3
Transistor Type
PNP - Pre-Biased
Frequency Transition
250MHz
Resistor Base R1
4.7 kOhms
Max Breakdown Voltage
50V
Lead Free Status Rohs Status
Lead free / RoHS Compliant
Part Status
Active
Number Of Pins
3
Collector Emitter Voltage Vceo
150mV
Dc Current Gain Hfe Min Ic Vce
100 @ 5mA, 10V
Vce Saturation Max Ib Ic
150mV @ 500µA, 5mA
Lead Free
Lead Free
Timepeak Reflow Temperaturemax S
NOT SPECIFIED
Packaging
Tape & Reel (TR)
Qualification Status
Not Qualified
Published
2015
Peak Reflow Temperature Cel
NOT SPECIFIED
Max Power Dissipation
150mW
Additional Feature
BUILT-IN BIAS RESISTOR
Voltage Collector Emitter Breakdown Max
50V
Current Collector Cutoff Max
500nA (ICBO)
Terminal Position
DUAL
Emitter Base Voltage Vebo
-5V
Max Frequency
250MHz
Continuous Collector Current
-100mA
Element Configuration
Single
Rohs Status
ROHS3 Compliant
Transistor Element Material
SILICON
Transition Frequency
250MHz
Moisture Sensitivity Level Msl
1 (Unlimited)
Number Of Terminations
3
Transistor Application
SWITCHING
Pbfree Code
yes
Max Collector Current
100mA
Other Names
DTA043TMT2LTR
Terminal Form
FLAT
Mounting Type
Surface Mount
Hfemin
100
Mount
Surface Mount
Power Max
150mW
Eccn Code
EAR99
Number Of Elements
1
Package Case
SOT-723
Factory Lead Time
7 Weeks
Currentcollector Ic Max
100mA
Collectoremitter Breakdown Voltage
50V
Polarity
PNP
Max Operating Temperature
150°C
Dc Current Gainmin Hfe
100
Pin Count
3