General catalogue
0105-50
RF MOSFETs Transistors
This part is listed from our general catalogue; no stock or price is shown. We quote by quantity and lead time.
- RoHS
- Compliant
- Pricing
- Priced by quantity and lead time.
- Support
- Technical team assistance
Technical Specifications
53
- Mounting Type
- Chassis Mount
- Gain
- 10 dB
- Transistor Application
- AMPLIFIER
- Operating Temperaturemax
- 200 °C
- Contact Plating
- Tin
- Collector Currentmax Ic
- 7 A
- Eccn Code
- EAR99
- Transistor Element Material
- SILICON
- Package Case
- 55JT
- Rohs
- Compliant
- Dc Current Gain Hfe Min Ic Vce
- 10 @ 1A 5V
- Timepeak Reflow Temperaturemax S
- NOT SPECIFIED
- Number Of Terminations
- 8
- Rohs Status
- Non-RoHS Compliant
- Part Status
- Obsolete
- Ihs Manufacturer
- ASI SEMICONDUCTOR INC
- Configuration
- Single
- Collectoremitter Breakdown Voltage
- 65 V
- Jesd609 Code
- e0
- Max Collector Current
- 7 A
- Max Power Dissipation
- 140 W
- Qualification Status
- Not Qualified
- Part Life Cycle Code
- Active
- Pin Count
- 8
- Package Description
- ,
- Dc Current Gainmin Hfe
- 10
- Mount
- Chassis Mount, Screw
- Frequency Transition
- 100MHz~500MHz
- Lifecycle Status
- Obsolete (Last Updated: 2 months ago)
- Terminal Form
- FLAT
- Polaritychannel Type
- NPN
- Number Of Pins
- 55
- Max Operating Temperature
- 200 °C
- Risk Rank
- 5.6
- Operating Temperature
- 200°C TJ
- Jesd30 Code
- R-CDFM-F8
- Surface Mount
- NO
- Highest Frequency Band
- ULTRA HIGH FREQUENCY B
- Reach Compliance Code
- unknown
- Power Max
- 140W
- Manufacturer Part Number
- 0105-50
- Transistor Type
- NPN
- Collector Emitter Voltage Vceo
- 33 V
- Min Operating Temperature
- -65 °C
- Packaging
- Bulk
- Peak Reflow Temperature Cel
- NOT SPECIFIED
- Terminal Position
- DUAL
- Number Of Elements
- 2
- Pbfree Code
- no
- Moisture Sensitivity Level Msl
- 1 (Unlimited)
- Transition Frequency
- 500 MHz
- Additional Feature
- HIGH RELIABILITY
- Power Dissipationmax Abs
- 140 W