General catalogue
11AA010-I/TO
Memory
This part is listed from our general catalogue; no stock or price is shown. We quote by quantity and lead time.
- RoHS
- Compliant
- Pricing
- Priced by quantity and lead time.
- Support
- Technical team assistance
Technical Specifications
44
- Memory Interface
- Single Wire
- Pin Count
- 3
- Clock Frequency
- 100kHz
- Jesd609 Code
- e3
- Part Status
- Active
- Power Supplies
- 2/5V
- Density
- 1 kb
- Packaging
- Bulk
- Number Of Terminations
- 3
- Nominal Supply Current
- 5mA
- Published
- 2009
- Terminal Pitch
- 1.27mm
- Memory Format
- EEPROM
- Organization
- 128X8
- Standby Currentmax
- 0.000005A
- Rohs Status
- ROHS3 Compliant
- Write Cycle Time Word Page
- 5ms
- Base Part Number
- 11AA010
- Terminal Finish
- Matte Tin (Sn) - annealed
- Package Case
- TO-226-3, TO-92-3 (TO-226AA)
- Moisture Sensitivity Level Msl
- 1 (Unlimited)
- Supply Voltagemin Vsup
- 1.8V
- Memory Types
- Non-Volatile
- Memory Size
- 1Kb 128 x 8
- Eccn Code
- EAR99
- Data Retention Timemin
- 200
- Voltage Supply
- 1.8V~5.5V
- Pbfree Code
- yes
- Serial Bus Type
- 1-WIRE
- Mounting Type
- Through Hole
- Mount
- Through Hole
- Endurance
- 1000000 Write/Erase Cycles
- Operating Temperature
- -40°C~85°C TA
- Number Of Pins
- 3
- Write Protection
- SOFTWARE
- Number Of Functions
- 1
- Terminal Position
- BOTTOM
- Memory Width
- 8
- Radiation Hardening
- No
- Supply Voltagemax Vsup
- 5.5V
- Interface
- Serial
- Factory Lead Time
- 7 Weeks
- Supply Voltage
- 5V
- Write Cycle Timemax Twc
- 10ms