General catalogue
11AA020T-I/MNY
Memory
This part is listed from our general catalogue; no stock or price is shown. We quote by quantity and lead time.
- RoHS
- Compliant
- Pricing
- Priced by quantity and lead time.
- Support
- Technical team assistance
Technical Specifications
48
- Nominal Supply Current
- 5mA
- Memory Format
- EEPROM
- Standby Currentmax
- 0.000005A
- Published
- 2008
- Terminal Pitch
- 0.5mm
- Jesd609 Code
- e4
- Clock Frequency
- 100kHz
- Memory Interface
- Single Wire
- Pin Count
- 8
- Density
- 2 kb
- Packaging
- Tape & Reel (TR)
- Number Of Terminations
- 8
- Part Status
- Active
- Power Supplies
- 2/5V
- Package Case
- 8-WFDFN Exposed Pad
- Moisture Sensitivity Level Msl
- 1 (Unlimited)
- Termination
- SMD/SMT
- Base Part Number
- 11AA020
- Memory Types
- Non-Volatile
- Rohs Status
- ROHS3 Compliant
- Write Cycle Time Word Page
- 5ms
- Timepeak Reflow Temperaturemax S
- 40
- Mount
- Surface Mount
- Write Protection
- SOFTWARE
- Endurance
- 1000000 Write/Erase Cycles
- Operating Temperature
- -40°C~85°C TA
- Number Of Pins
- 8
- Eccn Code
- EAR99
- Memory Size
- 2Kb 256 x 8
- Contact Plating
- Gold
- Mounting Type
- Surface Mount
- Serial Bus Type
- 1-WIRE
- Pbfree Code
- yes
- Voltage Supply
- 1.8V~5.5V
- Data Retention Timemin
- 200
- Length
- 2mm
- Reach Svhc
- No SVHC
- Factory Lead Time
- 6 Weeks
- Write Cycle Timemax Twc
- 10ms
- Supply Voltage
- 5V
- Number Of Functions
- 1
- Terminal Position
- DUAL
- Peak Reflow Temperature Cel
- 260
- Width
- 3mm
- Interface
- Serial
- Radiation Hardening
- No
- Supply Voltagemax Vsup
- 5.5V
- Height
- 730μm