General catalogue
11AA02E64T-I/SN
Memory
This part is listed from our general catalogue; no stock or price is shown. We quote by quantity and lead time.
- RoHS
- Compliant
- Pricing
- Priced by quantity and lead time.
- Support
- Technical team assistance
Technical Specifications
48
- Factory Lead Time
- 6 Weeks
- Qualification Status
- Not Qualified
- Length
- 4.9mm
- Surface Mount
- YES
- Supply Voltage
- 2.5V
- Write Cycle Timemax Twc
- 5ms
- Width
- 3.9mm
- Peak Reflow Temperature Cel
- 260
- Jesd30 Code
- R-PDSO-G8
- Terminal Position
- DUAL
- Number Of Functions
- 1
- Memory Width
- 8
- Supply Voltagemax Vsup
- 5.5V
- Interface
- Serial
- Endurance
- 1000000 Write/Erase Cycles
- Operating Temperature
- -40°C~85°C TA
- Write Protection
- SOFTWARE
- Operating Mode
- SYNCHRONOUS
- Screening Level
- TS 16949
- Memory Size
- 2Kb 256 x 8
- Data Retention Timemin
- 200
- Voltage Supply
- 1.8V~5.5V
- Serial Bus Type
- SPI
- Mounting Type
- Surface Mount
- Base Part Number
- 11AA02E64
- Memory Density
- 2048 bit
- Terminal Finish
- Matte Tin (Sn) - annealed
- Height Seated Max
- 1.75mm
- Package Case
- 8-SOIC (0.154, 3.90mm Width)
- Moisture Sensitivity Level Msl
- 1 (Unlimited)
- Supply Voltagemin Vsup
- 1.8V
- Memory Types
- Non-Volatile
- Rohs Status
- ROHS3 Compliant
- Write Cycle Time Word Page
- 5ms
- Timepeak Reflow Temperaturemax S
- 40
- Published
- 2013
- Terminal Pitch
- 1.27mm
- Memory Format
- EEPROM
- Organization
- 256X8
- Standby Currentmax
- 0.000001A
- Usage Level
- Automotive grade
- Memory Interface
- Single Wire
- Clock Frequency
- 100kHz
- Jesd609 Code
- e3
- Part Status
- Active
- Power Supplies
- 2/5V
- Packaging
- Tape & Reel (TR)
- Number Of Terminations
- 8