General catalogue
1011GN-125E
RF MOSFETs Transistors
This part is listed from our general catalogue; no stock or price is shown. We quote by quantity and lead time.
- RoHS
- Compliant
- Pricing
- Priced by quantity and lead time.
- Support
- Technical team assistance
Technical Specifications
23
- Type
- RF Power MOSFET
- Pd Power Dissipation
- 214 W
- Transistor Type
- HEMT
- Supplier Device Package
- 55-QQ
- Product Status
- Active
- Package Case
- 55-QQP
- Package
- Bulk
- Vgs Gatesource Voltage
- - 8 V to 0 V
- Voltage Test
- 50 V
- Voltage Rated
- 125 V
- Factory Pack Quantityfactory Pack Quantity
- 1
- Vds Drainsource Breakdown Voltage
- 125 V
- Operating Frequency
- 1030 MHz to 1090 MHz
- Gain
- 18.75 dB
- Power Output
- 150W
- Output Power
- 150 W
- Frequency
- 1.03GHz ~ 1.09GHz
- Id Continuous Drain Current
- 12 mA
- Current Test
- 60 mA
- Rohs
- Details
- Mounting Styles
- Flange Mount
- Mounting Type
- Surface Mount
- Series
- E